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新聞資訊

BLF278

NXP射頻功放管BLF278

VHF push-pull power MOS transistor

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors

特性和優(yōu)勢

High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability

應用

Broadcast transmitters in the VHF frequency range.

參數(shù)10-500MHZ(HF/VHF/ISM)

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